Resonant inverse photoemission of Sb multilayers on GaAs(110) and InP(110) surfaces
- Univ. of Minnesota, Minneapolis (United States)
The coverage- and structure-dependent empty electronic states of Sb multilayers on nearly unrelaxed GaAs(110) and relaxed InP(110) have been investigated using inverse photoemission (IPES) and low energy electron diffraction. Two significant Sb-derived empty states, termed features A and B, are used to characterize the evolution of ordered, metastable Sb multilayers and the ordered first monolayer. Feature A appears {approximately}0.30 and {approximately}0.35 eV above E{sub F} for ordered metastable Sb multilayers on p-GaAs(110) and p-InP(110), respectively, while feature B appears at 2.0 eV for 1 ML of ordered Sb. Feature A resonates for photon energies of IPES near h{omega}{sub p} = 15.9 eV because radiative decay of a plasmon within the Sb film provides a decay channel that competes with the inverse photoemission channel. This resonance occurs for thicknesses greater than {approximately}3.5 ML for GaAs(110) and {approximately}2 ML for InP(110) for overlayers annealed at 475 K following Sb growth at 300K. Structural studies reveal that the resonance features of IPES are correlated with metastable structures of Sb layers. Very gradual relief of strained-layer structures, coherent with (110) surfaces, may contribute to the existence of metastable phases for coverages below {approximately}10 ML. For Sb/GaAs(110), the metastable structures consist of long-range-ordered (110) domains with Sb crystallites between them. For Sb/InP (110), the metastable structures may be associated with a fairly continuous, periodic distribution of atomically corrugated (110) domains along (001), and the plane defined by the Sb zig-zag chains is not parallel to the unrelaxed (110) surface. These metastable structures may provide various coupling conditions for the momenta of the photon and the electron-excited Sb plasmons.
- OSTI ID:
- 5944972
- Report Number(s):
- CONF-9009402--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
ANTIMONY
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL STRUCTURE
DEVELOPED COUNTRIES
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION
FEDERAL REGION V
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INDIUM PHOSPHIDES
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