Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds
It is shown that the atomic structure of column-V-element overlayers on GaAs(110) is in the form of a zigzag chain arrangement by a combination of detailed experimental investigation (using both photoemission electron spectroscopy and low-energy electron diffraction) and simple theoretical analysis. Antimony (Sb), used as a representative column-V element, spontaneously forms zigzag chains which are parallel to and in registry with the zigzag chains of the GaAs(110) surface when deposited at room temperature. The close lattice match between the size of the GaAs(110) surface unit cell and the zigzag chain constructed with Sb favors a near-ideal (dehybridized Sb orbitals in the Sb--Sb bonds) structure for the adatom chain when bonded to the substrate. The result is a new very-well-ordered atomic arrangement on the surface with two Sb atoms inside the GaAs(110) surface unit cell. From simple calculations, it is shown that the dehybridization of the states of the column-V atom in the zigzag chain structure results in a surprisingly narrow (approx.1.5-eV) band of bonding p states, when compared to the approx.12-eV bandwidth of bonding p states in a linear chain. Strong evidence for this narrow band of Sb p states is shown in the photoemission data. Two schemes for attachment of the zigzag chain to the GaAs(110) surface are presented and their electronic structure is analyzed.It is concluded that the combination of simple theoretical and detailed experimental approaches employed here are useful, in general, for determining the structure of column-V overlayers on III-V semiconductor surfaces.
- Research Organization:
- Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
- OSTI ID:
- 6132468
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 27:10; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
Similar Records
New surface atomic structures for column V overlayers on the (110) surfaces of III-V compound semiconductors
Structural and electronic properties of Bi/GaAs(110)
Related Subjects
360603* -- Materials-- Properties
ADSORPTION
ANTIMONY
ARSENIC COMPOUNDS
ARSENIDES
AUGER ELECTRON SPECTROSCOPY
BREMSSTRAHLUNG
COHERENT SCATTERING
CRYSTAL STRUCTURE
DATA
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
MATERIALS
METALS
N-TYPE CONDUCTORS
NUMERICAL DATA
P-TYPE CONDUCTORS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
RADIATIONS
SCATTERING
SEMICONDUCTOR MATERIALS
SORPTION
SORPTIVE PROPERTIES
SPECTROSCOPY
SURFACE PROPERTIES
SYNCHROTRON RADIATION