Column III and V elements on GaAs (110): Bonding and adatom-adatom interaction

Journal Article · Mon Sep 01 04:00:00 EDT 1980 · J. Vac. Sci. Technol.; (United States)

DOI:https://doi.org/10.1116/1.570608· OSTI ID:5031428

Skeath, P; Su, C Y; Lindau, I; Spicer, W E

Column V elements adsorbed on GaAs (110) exhibit strikingly different behavior than adsorbed column III elements in terms of the overlayers bonding to the semiconductor, the effect on the semiconductor surface lattice, and long-range order. A strong interaction between adatoms is found with submonolayer coverings of column III metals which leads to the formation of flat raftlike metallic patches. Unlike the column III metals, Sb adsorption produces large changes in the electronic states and atomic arrangement of the semiconductor surface lattice. An elementary view of the factors responsible for the different characteristics and effects of these overlayers on GaAs (110) is given, but its extension to other adatoms is shown to be limited. These results have strong relevance to current theoretical models of Al and Ga overlayers on GaAs (110), as well as to molecular beam epitaxy and Schottky barrier formation.

• Research Organization: Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
• OSTI ID: 5031428
• Journal Information: J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 17:5; ISSN JVSTA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ADSORPTION
ALUMINIUM
ANTIMONY
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
BONDING
BREMSSTRAHLUNG
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
EXCITONS
FABRICATION
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERACTIONS
INTERFACES
JOINING
METALS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
QUASI PARTICLES
RADIATIONS
SCATTERING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SORPTION
SORPTIVE PROPERTIES
SPECTROSCOPY
SURFACE PROPERTIES
SYNCHROTRON RADIATION
ULTRAHIGH VACUUM