Bonding of Al and Ga to GaAs(110)
Journal Article
·
· J. Vac. Sci. Technol.; (United States)
The interfacial electronic states associated with Al and Ga overlayers on cleaved GaAs (110) surfaces are studied by ultraviolet photoemission spectroscopy (UPS) and low energy electron diffraction (LEED). Deposition of Al or Ga can produce valence-band spectra nearly devoid of new structure. Sb produces quite significant changes in the surface valence band and is shown as a contrasting example. Pseudopotential calculations from the literature for Al- and Ga-ordered overlayers are found to be in somewhat better agreement with the data than the corresponding tight-binding calculations, particularly in the adatom states which lie above the GaAs valence-band maximum (VBM), although neither calculation gives a good description of the observed overlayer states. It is shown that Al and Ga most likely form two-dimensional clusters or rafts on the surface at submonolayer coverage which are not in registry with the GaAs surface lattice. A comparison is made with results by other workers for Al, Ga, and In on GaAs and Si.
- Research Organization:
- Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
- OSTI ID:
- 5398959
- Journal Information:
- J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 17:1; ISSN JVSTA
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:6132468
Related Subjects
36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
ALUMINIUM
ANTIMONY
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
BONDING
BREMSSTRAHLUNG
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
FABRICATION
FILMS
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
JOINING
METALS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
POTENTIALS
RADIATIONS
SCATTERING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTROSCOPY
SURFACES
SYNCHROTRON RADIATION
ULTRAVIOLET RADIATION
360102* -- Metals & Alloys-- Structure & Phase Studies
ALUMINIUM
ANTIMONY
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
BONDING
BREMSSTRAHLUNG
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
FABRICATION
FILMS
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
JOINING
METALS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
POTENTIALS
RADIATIONS
SCATTERING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTROSCOPY
SURFACES
SYNCHROTRON RADIATION
ULTRAVIOLET RADIATION