Overlayer-induced valence states, and evidence for charge transfer in Na/GaP(110) and Na/GaAs(110): A comparative photoemission study

Journal Article · Thu Jul 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586919· OSTI ID:161727

Evans, D A ^[1]; Lapeyre, G J; Horn, K ^[2]

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1. M.R.I.C., Wrexham (United Kingdom)
2. Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin (Germany)

Core and valence level photoemission experiments for Na overlayers on GaP(110) and GaAs(110) reveal new peaks which are interpreted in terms of Na-Ga charge transfer, as predicted by total energy calculations. New peaks in the region above the valence band are identified with the previously empty Ga surface state which is filled by the charge transfer process. The role of this gap emission in the pinning of the Fermi level at submonolayer to metallic coverages is discussed for both semiconductors. 21 refs., 4 figs.

• OSTI ID: 161727
• Report Number(s): CONF-930115--; CNN: Grant 05 490 FX B
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
BAND THEORY
ELECTRONIC STRUCTURE
EMISSION SPECTRA
FERMI LEVEL
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INTERFACES
LAYERS
PHOTOEMISSION
SODIUM
VALENCE