Process investigations of total-dose hard, type-108 op amps

Conference · Wed Dec 01 04:00:00 EST 1976 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7107327

Palkuti, L J ^[1]; Sivo, L L; Greegor, R B

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1. Naval Research Lab., Washington, DC

Analyses and process investigations of a 108 op amp fabrication sequence have been conducted. The analysis was initiated with a total dose characterization of 108 op amps that indicated that total-dose sensitive commercial devices could be radiation hardened by modifying their standard processing. Subsequent failure analysis identified the critical op amp failure modes as primarily the result of superbeta-gain loss and leakage increase. A process-flow analysis with MOS capacitors on the selected baseline fabrication sequence was followed by a study of specific processing steps on the radiation performance of 108 op amps. Amplifiers, transistor test devices and MOS capacitors were evaluated. Emphasis was placed on processing steps near the end of the process sequence. Using the defined process it was possible to fabricate 108 devices with minimal degradation at 10/sup 6/ rads(Si). Some relaxation of initial 108A performance is required for the hard devices.

• OSTI ID: 7107327
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-23:6
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFIERS
CAPACITORS
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FABRICATION
GAIN
HARDENING
LEAKAGE CURRENT
MOS TRANSISTORS
OPERATIONAL AMPLIFIERS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SYSTEM FAILURE ANALYSIS
SYSTEMS ANALYSIS
TRANSISTORS