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Total dose hardness assurance techniques for new generation COTS devices

Journal Article · · IEEE Transactions on Nuclear Science
DOI:https://doi.org/10.1109/23.556918· OSTI ID:445491
; ;  [1]
  1. California Inst. of Technology, Pasadena, CA (United States). Jet Propulsion Lab.
Hardness assurance techniques and total dose radiation characterization data for new generation linear and COTS devices from various manufacturers are presented. A bipolar op amp showed more degradation at high dose rate than at low dose rate, which is opposite to the behavior of many other bipolar linear devices. New generation low-power op amps showed more degradation in electrical parameters with total power supply voltage of 3V than at higher voltages. Minimum operating voltage is an important characterization parameter for newer low-power linear circuit designs.
Sponsoring Organization:
National Aeronautics and Space Administration, Washington, DC (United States)
OSTI ID:
445491
Report Number(s):
CONF-960773--
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English

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