Hardness-assurance and testing issues for bipolar/BiCMOS devices

Conference · Wed Dec 01 04:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:7125347

Nowlin, R N; Schrimpf, R D ^[1]; Fleetwood, D M ^[2]; Pease, R L ^[3]; Combs, W E ^[4]

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1. Univ. of Arizona, Tucson (United States). Dept. of ECE
2. Sandia National Labs., Albuquerque, NM (United States)
3. RLP Research, Albuquerque, NM (United States)
4. Naval Surface Warfare Center, Crane, IN (United States)

Different hardness-assurance tests are often required for advanced bipolar devices than for CMOS devices. In this work, the dose-rate dependence of bipolar current-gain degradation is mapped over a wide range of dose rates for the first time, and it is very different from analogous MOSFET curves. Annealing experiments following irradiation show negligible change in base current at room temperature, but significant recovery at temperatures of 100 C and above. In contrast to what is observed in MOSFET's, irradiation and annealing tests cannot be used to predict the low-dose-rate response of bipolar devices. A comparison of x-ray-induced and [sup 60]Co gamma-ray-induced gain degradation is reported for the first time for bipolar transistors. The role of the emitter bias during irradiation is also examined. Implications for hardening and hardness assurance are discussed.

• OSTI ID: 7125347
• Report Number(s): CONF-930704--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 40:6Pt1
• Country of Publication: United States
• Language: English

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