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Method for forming high superconducting T /SUB c/ niobium nitride film at ambient temperatures

Patent ·
OSTI ID:7101134
A method of forming a high T /SUB c/ niobium nitride (NbN) film on a substrate at ambient substrate temperature. The method includes the step of reactively sputtering NbN onto the substrate in an argon-nitrogen atmosphere with controlled amounts of methane added to the argon-nitrogen gas mixture.
Assignee:
Secretary of the Navy
Patent Number(s):
US 4426268
OSTI ID:
7101134
Country of Publication:
United States
Language:
English

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Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALKANES
AMBIENT TEMPERATURE
ARGON
ATMOSPHERES
CONTROLLED ATMOSPHERES
DESIGN
DISPERSIONS
ELEMENTS
FILMS
FLUIDS
GASES
HYDROCARBONS
METHANE
MIXTURES
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN
NITROGEN COMPOUNDS
NONMETALS
OPERATION
ORGANIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RARE GASES
SPUTTERING
SUBSTRATES
SUPERCONDUCTING FILMS
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE
VACUUM SYSTEMS