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Method for forming high superconducting T/sub c/ niobium nitride film at ambient temperatures

Patent ·
OSTI ID:5413181
This report contains a method of forming a high TC niobium nitride (NbN) film on a substrate at ambient substrate temperature. The method includes the step of reactively sputtering NbN onto the substrate in an argon-nitrogen atmosphere with controlled amounts of methane added to the argon-nitrogen gas mixture.
Assignee:
EDB-84-036689; ERA-09-012380
Patent Number(s):
None
OSTI ID:
5413181
Country of Publication:
United States
Language:
English