Reactive ion etching damage to GaAs layers with etch stops

Journal Article · Thu Sep 01 04:00:00 EDT 1988 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584217· OSTI ID:7088848

Knoedler, C M; Osterling, L; Shtrikman, H

The reactive ion etching damage occurring in GaAs/AlGaAs heterostructure devices etched in CCl/sub 2/F/sub 2/ and He at low-self-bias voltages (-85 V) was characterized by Schottky diodes. The effect of overetching was examined by etching down to a thin AlAs etch stop layer and electrically characterizing the underlying GaAs layers. Simultaneously etched bulk samples displayed less damage, indicating that bulk samples may not give a true indication of the damage in heterojunction samples. It was deduced that helium ions are most probably responsible for the damage observed.

• Research Organization: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
• OSTI ID: 7088848
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 6:5; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARBON COMPOUNDS
CARBON FLUORIDES
COLLISIONS
DAMAGE
ETCHING
FLUORIDES
FLUORINE COMPOUNDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HETEROJUNCTIONS
ION COLLISIONS
JUNCTIONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SURFACE FINISHING