Effects of ion species and adsorbed gas on dry etching induced damage in GaAs
Dry etching techniques which induce minimum damage on the etched surfaces are essential for submicrometer device fabrication. In this study, damage induced in GaAs by ion-beam etching and ion-beam-assisted etching was found to be affected by ion energy, ion mass, and adsorbed gas on the sample surfaces during etching. The etching characteristics of Ne, Ar, and Xe ions with energies ranging from 250 to 2000 eV were studied. The effect of gas adsorption was investigated by using Cl/sub 2/ (reactive gas for GaAs) and NO/sub 2/ (nonreactive gas for GaAs) with gas fluxes equivalent to pressures between 2 and 50 x 10/sup -4/ Torr. Dry etching induced damage was evaluated by measuring electrical characteristics of Schottky diodes fabricated on the etched GaAs surfaces. Our results indicated that damage in GaAs can be minimized by reducing the ion penetration distance into the substrate by using low ion energy and heavy ion species, and by introducing adsorbed gas, such as Cl/sub 2/ or NO/sub 2/, on the sample surface as a protective layer.
- Research Organization:
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
- OSTI ID:
- 5994537
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 3:1; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization of damage on GaAs in a reactive ion beam etching system using Schottky diodes
Damage and contamination-free GaAs and AlGaAs etching using a novel ultrahigh-vacuum reactive ion beam etching system with etched surface monitoring and cleaning method
Related Subjects
360605* -- Materials-- Radiation Effects
ADSORPTION
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHALCOGENIDES
CHLORINE
COLLISIONS
DAMAGE
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY RANGE
ETCHING
EV RANGE
EV RANGE 100-1000
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALOGENS
HIGH VACUUM
ION BEAMS
ION COLLISIONS
KEV RANGE
KEV RANGE 01-10
NITROGEN COMPOUNDS
NITROGEN DIOXIDE
NITROGEN OXIDES
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SORPTION
SURFACE FINISHING