Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Damage and contamination-free GaAs and AlGaAs etching using a novel ultrahigh-vacuum reactive ion beam etching system with etched surface monitoring and cleaning method

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.573831· OSTI ID:5540355
;

In situ monitoring and suppression of damage and contamination induced by GaAs and AlGaAs reactive-ion-beam-etching (RIBE) have been investigated to establish clean surfaces, required for fabricating III--V compound optoelectronic integrated circuits (OEIC's). A novel ultrahigh-vacuum RIBE system with etched surface monitors and a surface cleaning gun has been developed for this purpose. Damage suppression with low energy (10--100 eV) RIBE was confirmed with an ideality factor in a Schottky diode. Removal of Cl contamination induced by Cl/sub 2/ plasma was established with temperature-controlled (200/sup 0/C) RIBE or heat treatment (400/sup 0/C) after RIBE. Furthermore, it was demonstrated for the first time that both GaAs and AlGaAs native oxide layers could be successfully removed simply with irradiations of H and Cl radical beam released from the novel, compact electron-cyclotron-resonance (ECR) plasma gun.

Research Organization:
Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
OSTI ID:
5540355
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 4:3; ISSN JVTAD
Country of Publication:
United States
Language:
English

Similar Records

An AlGaAs laser with high-quality dry etched mirrors fabricated using an ultrahigh vacuum in situ dry etching and deposition processing system
Journal Article · Mon Oct 31 23:00:00 EST 1988 · IEEE J. Quant. Electron.; (United States) · OSTI ID:6587559
Characterization of damage on GaAs in a reactive ion beam etching system using Schottky diodes
Journal Article · Sun May 01 00:00:00 EDT 1988 · J. Vac. Sci. Technol., B; (United States) · OSTI ID:5155331
Damage induced by CHF/sub 3/+C/sub 2/F/sub 6/ plasma etching on Si-implanted GaAs(100)
Journal Article · Tue Sep 01 00:00:00 EDT 1987 · J. Appl. Phys.; (United States) · OSTI ID:6160593

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
CHLORINE IONS
CLEANING
COLLISIONS
CONTAMINATION
DAMAGE
ELECTRONIC CIRCUITS
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HYDROGEN IONS
INTEGRATED CIRCUITS
ION BEAMS
ION COLLISIONS
IONS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE CLEANING
SURFACE CONTAMINATION
SURFACE FINISHING
ULTRAHIGH VACUUM