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Characterization of damage on GaAs in a reactive ion beam etching system using Schottky diodes

Journal Article · · J. Vac. Sci. Technol., B; (United States)
DOI:https://doi.org/10.1116/1.584314· OSTI ID:5155331
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Chlorine (Cl/sub 2/) reactive ion beam etching (RIBE)-induced damage on the GaAs wafer has been characterized by studing the characteristics of Schottky diodes fabricated on the etched surfaces. The ideality factors and the Schottky barrier heights measured by the current--voltage characteristics for ion extraction voltage range from 30 to 200 V at Cl/sub 2/ gas pressure of 2 x 10/sup -3/ Torr and are comparable to those of the reference sample cleaned by HCl. Both the n value and the barrier height degrade for ion extraction voltage of more than 300 V. For higher Cl/sub 2/ gas pressure, the damage on the etched surface is less. These results suggest that with the low-energy ions and high-Cl/sub 2/ gas pressure, the damage of the GaAs surface is reduced significantly. The electron deep levels induced by RIBE disappear after annealing at 400 /sup 0/C for 10 min.
Research Organization:
Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki, 211, Japan
OSTI ID:
5155331
Journal Information:
J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 6:3; ISSN JVTBD
Country of Publication:
United States
Language:
English

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Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHLORINE
DAMAGE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
ELEMENTS
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALOGENS
HYDROCHLORIC ACID
HYDROGEN COMPOUNDS
INORGANIC ACIDS
ION BEAMS
NONMETALS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE FINISHING