Effects of dry etching on GaAs
A number of dry etching techniques have been developed and their ability to produce anisotropic etch profiles has been demonstrated. In addition to etch anisotropy, an important consideration for device and circuit fabrication is whether a sample suffers radiation damage by exposure to ions, electrons, or ultraviolet light during etching. In this study we evaluate the degree of radiation damage induced in GaAs by ion-beam etching with Ar, reactive-ion etching with CF/sub 4/ and CHF/sub 3/, and ion-beam-assisted etching with Ar and Cl/sub 2/. In addition, we propose and demonstrate processing techniques which can be used after dry etching to reduce the effects of radiation damage. GaAs samples were etched under a variety of etching conditions. The degree of radiation damage caused by etching was determined by evaluating Schottky diodes fabricated on the etched surfaces and by using deep level transient spectroscopy to characterize trapping centers. It was found that the barrier heights and breakdown voltages of Schottky diodes were changed after etching. Also, an increase in the density of traps was observed. Variations in the etching conditions had a strong effect on the measured characteristics of the samples.
- Research Organization:
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
- OSTI ID:
- 5577103
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Vol. 1:4
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
36 MATERIALS SCIENCE
ARGON IONS
COLLISIONS
GALLIUM ARSENIDES
ETCHING
ION COLLISIONS
PHYSICAL RADIATION EFFECTS
CARBON FLUORIDES
CARBON TETRAFLUORIDE
DAMAGE
INTEGRATED CIRCUITS
MICROELECTRONICS
SCHOTTKY BARRIER DIODES
ARSENIC COMPOUNDS
ARSENIDES
CARBON COMPOUNDS
CHARGED PARTICLES
ELECTRONIC CIRCUITS
FLUORIDES
FLUORINATED ALIPHATIC HYDROCARBONS
FLUORINE COMPOUNDS
GALLIUM COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HALOGENATED ALIPHATIC HYDROCARBONS
IONS
MICROELECTRONIC CIRCUITS
ORGANIC COMPOUNDS
ORGANIC FLUORINE COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE FINISHING
640301* - Atomic
Molecular & Chemical Physics- Beams & their Reactions
360605 - Materials- Radiation Effects