Raman scattering study of dry etching of GaAs: A comparison of chemically assisted ion beam etching and reactive ion etching

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585594· OSTI ID:5189300

Glembocki, O J; Dobisz, E A ^[1]

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1. US Naval Research Lab., Washington, DC (United States)

Chemically assisted ion beam etching (CAIBE) and reactive ion etching (RIE) are two popular dry etching techniques routinely used in the fabrication of submicron features. The authors have used both in situ and ex situ Raman spectroscopy to study the effects of dry etching on the depletion layer in heavily doped GaAs. The authors find that both CAIBE and RIE produce large numbers of traps that produce an insulting layer on the surface. CAIBE using ion energies greater than 2 keV also produces a damaged layer. For both techniques the use of chlorine based species reduces both traps and damage. Sputtering with chlorine alone, is shown to be able to eliminate both damage and traps. Raman spectroscopy is shown as a powerful in situ tool for studying etch damage.

• OSTI ID: 5189300
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ARSENIC COMPOUNDS
ARSENIDES
CHLORINE
DOPED MATERIALS
ELECTRICAL INSULATION
ELEMENTS
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALOGENS
LASER SPECTROSCOPY
MATERIALS
NONMETALS
PNICTIDES
RAMAN SPECTROSCOPY
SPECTROSCOPY
SPUTTERING
SURFACE FINISHING
TRAPS