Selective reactive ion etching in SiCl{sub 4}/SiF{sub 4} plasmas for gate recess in GaAs/AlGaAs modulation-doped field effect transistors
- Univ. of Illinois, Urbana-Champaign, IL (United States); and others
Various issues concerning the utilization of SiCl{sub 4}/SiF{sub 4} selective reactive ion etching (SRIE) for gate recess in the fabrication of GaAs/AlGaAs modulation-doped field effect transistors (MODFETs) have been studied. Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy, and Schottky diode measurements were performed to determine the effects of SRIE and post-SRIE processing on the surface conditions of GaAs and AlGaAs layers. Hall measurements were conducted at 300 and 77 K to characterize the degradation of the two-dimensional electron gas properties of GaAs/Al{sub 0.7}As heterostructures due to ion bombardment during SRIE. Finally, direct-current and high-frequency measurements were performed on dry-etched GaAs/Al{sub 0.3}Ga{sub 0.7}As MODFETs to determine the effects of SRIE on device performance. It is shown that extensive overetching at low plasma voltages (<90 V) during gate recessing results in an increase in the device threshold voltage, but has little effect on the gate-to-drain breakdown voltage, maximum transconductance, and unity current gain frequency of the devices. 21 refs., 17 figs.
- OSTI ID:
- 147007
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
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