Reactive ion etch of GaAs and AlGaAs using BCl{sub 3}, SiCl{sub 4} and SF{sub 6} instead of CCl{sub 2}F{sub 2}

Book · Fri Dec 30 23:00:00 EST 1994

OSTI ID:106199

Wu, J W; Chang, C Y; Lin, K C; Chang, E Y; Hwang, J H ^[1]

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1. National Chiao Tung Univ., Hsinchu (Taiwan, Province of China)

In the past, CCl{sub 2}F{sub 2} had been widely used in the dry etching process of the GaAs-based materials. However, it causes ozone depletion and is detrimental to the environment. In order to prevent further ozone depletion, it is necessary to search for some alternative gases. In this study, chloric gases, like BCl{sub 3} and SiCl{sub 4}, were used to provide an alternative way for the reactive ion etch of GaAs and AlGaAs. To provide high etching selectivity between GaAs and AlGaAs, a fluorine containing gas SF{sub 6} is added, to increase the etch rate of GaAs than that of AlGaAs, which is due to the formation of non-volatile solid AlF{sub 3}. In this study the etching characteristics of the BCl{sub 3}/SF{sub 6}, SiCl{sub 4}/SF{sub 6} were studied and high etching selectivity between AlGaAs/GaAs is achieved.

• OSTI ID: 106199
• Report Number(s): CONF-940411--; ISBN 1-55899-239-1
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
36 MATERIALS SCIENCE
54 ENVIRONMENTAL SCIENCES
ALUMINIUM ARSENIDES
BORON CHLORIDES
CHLOROFLUOROCARBONS
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
MANUFACTURING
MATERIAL SUBSTITUTION
PERFORMANCE TESTING
SEMICONDUCTOR DEVICES
SILICON CHLORIDES
SULFUR FLUORIDES