Dead-time-free selective dry etching of GaAs/AlGaAs using BCl{sub 3}/CHF{sub 3} plasma

Journal Article · Tue Nov 01 04:00:00 EST 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.587486· OSTI ID:263450

Takenaka, Hiroshi; Oishi, Yoshiro; Ueda, Daisuke ^[1]

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1. Matsushita Electronics Corp., Osaka (Japan)

A dead-time-free selective dry etching of GaAs/AlGaAs using mixed plasma of BCl{sub 2} and CHF{sub 3} has been developed. The selectivity of the etching for GaAs/AlGaAs is strongly dependent on the flow ratio R, where R=(flow of CHF{sub 3})/(flow of CHF{sub 3} + flow of BCl{sub 3}). It was also found that the angle of the sidewall can be varied from overhanging to tapered by controlling R. No undercutting was observed. Complete vertical recess structures with sub-quarter micrometer width were obtained at R-40% where selectivity of 30 was attained. The roughness of the etched surface was also strongly dependent on R. A smooth etched surface was obtained where R is larger than 40% even for bulk GaAs. Complete square-shaped vertical recessed structures with sub-quarter micrometer width were obtained in a GaAs/AlGaAs epitaxial wafer. This etching process is very applicable for the fabrication of GaAs/AlGaAs heterojunction devices such as the GaAs modulation doped field-effect transistor and the heterojunction bipolar transistor. 10 refs., 8 figs.

• OSTI ID: 263450
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 12; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
BARIUM CHLORIDES
DEAD TIME
ETCHING
GALLIUM ARSENIDES
PLASMA
ROUGHNESS