Laterally etched undercut (LEU) technique to reduce base-collector capcitances in heterojunction bipolar transistors
Conference
·
OSTI ID:405406
- and others
The authors report a novel fabrication process aimed at reducing the parasitic junction capacitance of AlGaAs/GaAs heterojunction bipolar transistors. The process, named as the Laterally Etched Undercut (LEU) process, physically removes the extrinsic base-collector junction area and results in a cantilever structure. The d.c., small-signal, and large-signal performances of the LEU devices are compared to those obtained from the conventional devices.
- OSTI ID:
- 405406
- Report Number(s):
- CONF-951097--
- Country of Publication:
- United States
- Language:
- English
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