The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors

Conference · Tue Aug 01 00:00:00 EDT 2000

OSTI ID:761866

CHANG, PING-CHIH ^[1]; LI, N Y; BACA, ALBERT G; MONIER, C; LAROCHE, J R; HOU, H Q; REN, F; PEARTON, S J

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1. Sandia National Laboratories

The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V{sub ON}) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal D. C. characteristics with a current gain ({beta}) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with f{sub T} and f{sub MAX} values of 12 GHz and 10 GHz, respectively. This device is very suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 761866
• Report Number(s): SAND2000-2038C
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM
GALLIUM ARSENIDES
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM NITRIDES
JUNCTION TRANSISTORS
PERFORMANCE