Etching of GaAs/AlGaAs rib waveguide structures using BCl{sub 3}/CI{sub 2}/N{sub 2}/Ar electron cyclotron resonance

Journal Article · Fri Sep 01 00:00:00 EDT 1995 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.588128· OSTI ID:184101

Constantine, C ^[1]; Shul, R J; Sullivan, C T ^[2]

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1. Plasma Therm IP, St. Petersburg, FL (United States)
2. Sandia National Labs., Albuquerque, NM (United States); and others

An anisotropic nonselective etch for GaAs/AlGaAs rib waveguides has been developed for use under electron cyclotron resonance conditions. The plasma chemistry features BCl{sub 3} to minimize AlGaAs oxidation effects and small additions of N{sub 2} to induce sidewall protection when using photoresist masks. The fundamental mode attenuation in GaAs/AlGaAs waveguides is sensitive to the choice of both plasma chemistry and making material, but can be reduced to < 1 dB cm{sup -1} for channel widths of 4-5 {mu}m. 36 refs., 10 figs.

• OSTI ID: 184101
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 5 Vol. 13; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
66 PHYSICS
ANISOTROPY
ELECTRON CYCLOTRON-RESONANCE
ETCHING
GALLIUM ARSENIDES
PLASMA
SCANNING ELECTRON MICROSCOPY
WAVEGUIDES