Masking considerations in chemically assisted ion beam etching of GaAs/AlGaAs laser structures
Journal Article
·
· J. Electrochem. Soc.; (United States)
The use of photoresist, Cr, and SiO/sub 2/ as etch masks for GaAs/AlGaAs structures in chemically assisted ion beam etching is reported. The optimized etch with a photoresist mask results in a high degree of anisotropy and smooth sidewalls. However, the etched surface contains undesirable features. The etch with a Cr mask is also highly anisotropic, and the etched surface is free of features. The drawback with Cr masks is that the sidewalls are rough. Vertical and smooth sidewalls as well as a featureless surface are obtained with a SiO/sub 2/ mask. The SiO/sub 2/ mask has been employed to etch the facets of monolithic GaAs/AlGaAs-based laser structures.
- Research Organization:
- Cornell Univ., Ithaca, NY (USA). School of Electrical Engineering; Cornell Univ., Ithaca, NY (USA). School of Applied and Engineering Physics
- OSTI ID:
- 5777295
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 136:3; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
·
OSTI ID:6204960
Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANISOTROPY
ARSENIC COMPOUNDS
ARSENIDES
BEAM INJECTION
CHALCOGENIDES
CHEMISTRY
CHROMIUM
ELECTROMAGNETIC RADIATION
ELEMENTS
ETCHING
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION BEAM INJECTION
LASER RADIATION
METALS
OPTIMIZATION
OXIDES
OXYGEN COMPOUNDS
PHOTOCHEMISTRY
PNICTIDES
RADIATIONS
SILICON COMPOUNDS
SILICON OXIDES
SURFACE FINISHING
THIN FILMS
TRANSITION ELEMENTS
360601* -- Other Materials-- Preparation & Manufacture
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANISOTROPY
ARSENIC COMPOUNDS
ARSENIDES
BEAM INJECTION
CHALCOGENIDES
CHEMISTRY
CHROMIUM
ELECTROMAGNETIC RADIATION
ELEMENTS
ETCHING
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION BEAM INJECTION
LASER RADIATION
METALS
OPTIMIZATION
OXIDES
OXYGEN COMPOUNDS
PHOTOCHEMISTRY
PNICTIDES
RADIATIONS
SILICON COMPOUNDS
SILICON OXIDES
SURFACE FINISHING
THIN FILMS
TRANSITION ELEMENTS