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Title: Cl{sub 2}-based dry etching of GaAs, AlGaAs, and GaP

Abstract

Cl{sub 2}-based plasmas for etching GaAs, AlGaAs, and GaP have been examined as a function of gas additive (Ar, N{sub 2}, or H{sub 2}), radio frequency (RF) and microwave power, plasma composition, mask material, and process pressure. In a load-locked reactor, smooth etched surface morphologies were obtained over basically all conditions investigated, with typical root-mean-square roughness of {le}1.5 nm measured by atomic force microscopy. The etch rates for all three materials increase with RF power (ion energy), microwave power (ion current), Cl{sub 2} percentage, and pressure, with controlled rates of {approximately}0.4 {micro}m/min at a condition of 2Cl{sub 2}/13Ar, 850 W microwave power, 1.5 mTorr, and 100 to 150 W of RF power. Operating under electron cyclotron resonance conditions where the ion density is {ge}5 {times} 10{sup 11} cm{sup {minus}3} (measured by microwave reflection interferometry) produces rapid degradation of photoresist, and more robust mask materials such as SiN{sub x}, SiO{sub 2}, or W are necessary.

Authors:
; ; ; ;  [1]; ;  [2]
  1. Univ. of Florida, Gainesville, FL (United States)
  2. AT and T Bell Labs., Murray Hill, NJ (United States)
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
276655
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Volume: 143; Journal Issue: 6; Other Information: PBD: Jun 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; GALLIUM ARSENIDES; ETCHING; ALUMINIUM ARSENIDES; GALLIUM PHOSPHIDES; CHLORINE; ADDITIVES; ARGON; NITROGEN; HYDROGEN; MASKING; PARAMETRIC ANALYSIS; SEMICONDUCTOR MATERIALS; SOLAR CELLS

Citation Formats

Lee, J W, Hong, J, Lambers, E S, Abernathy, C R, Pearton, S J, Hobson, W S, and Ren, F. Cl{sub 2}-based dry etching of GaAs, AlGaAs, and GaP. United States: N. p., 1996. Web. doi:10.1149/1.1836940.
Lee, J W, Hong, J, Lambers, E S, Abernathy, C R, Pearton, S J, Hobson, W S, & Ren, F. Cl{sub 2}-based dry etching of GaAs, AlGaAs, and GaP. United States. doi:10.1149/1.1836940.
Lee, J W, Hong, J, Lambers, E S, Abernathy, C R, Pearton, S J, Hobson, W S, and Ren, F. Sat . "Cl{sub 2}-based dry etching of GaAs, AlGaAs, and GaP". United States. doi:10.1149/1.1836940.
@article{osti_276655,
title = {Cl{sub 2}-based dry etching of GaAs, AlGaAs, and GaP},
author = {Lee, J W and Hong, J and Lambers, E S and Abernathy, C R and Pearton, S J and Hobson, W S and Ren, F},
abstractNote = {Cl{sub 2}-based plasmas for etching GaAs, AlGaAs, and GaP have been examined as a function of gas additive (Ar, N{sub 2}, or H{sub 2}), radio frequency (RF) and microwave power, plasma composition, mask material, and process pressure. In a load-locked reactor, smooth etched surface morphologies were obtained over basically all conditions investigated, with typical root-mean-square roughness of {le}1.5 nm measured by atomic force microscopy. The etch rates for all three materials increase with RF power (ion energy), microwave power (ion current), Cl{sub 2} percentage, and pressure, with controlled rates of {approximately}0.4 {micro}m/min at a condition of 2Cl{sub 2}/13Ar, 850 W microwave power, 1.5 mTorr, and 100 to 150 W of RF power. Operating under electron cyclotron resonance conditions where the ion density is {ge}5 {times} 10{sup 11} cm{sup {minus}3} (measured by microwave reflection interferometry) produces rapid degradation of photoresist, and more robust mask materials such as SiN{sub x}, SiO{sub 2}, or W are necessary.},
doi = {10.1149/1.1836940},
journal = {Journal of the Electrochemical Society},
number = 6,
volume = 143,
place = {United States},
year = {1996},
month = {6}
}