ECR etching of GaP, GaAs, InP, and InGaAs in Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}/N{sub 2}

Technical Report · Sat Jun 01 00:00:00 EDT 1996

DOI:https://doi.org/10.2172/244631· OSTI ID:244631

Shul, R J; Baca, A G; Rieger, D J; Hou, H ^[1]; Pearton, S J ^[2]; Ren, F ^[3]

---

1. Sandia National Labs., Albuquerque, NM (United States)
2. Univ. of Florida, Gainesville, FL (United States)
3. AT and T Bell Labs., Murray Hill, NJ (United States)

Electron cyclotron resonance (ECR) etching GaP, GaAs, InP, and InGaAs are reported as a function of percent chlorine-containing gas for Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}N{sub 2} plasma chemistries. GaAs and GaP etch rates were faster than InP and InGaAs, independent of plasma chemistry due to the low volatility of the InCl{sub x} etch products. GaAs and GaP etch rates increased as %Cl{sub 2} was increased for Cl{sub 2}/Ar and Cl{sub 2}/N{sub 2} plasmas. The GaAs and GaP etch rates were much slower in BCl{sub 3}-based plasmas due to lower concentrations of reactive Cl, however enhanced etch rates were observed in BCl{sub 3}/N{sub 2} at 75% BCl{sub 3}. Smooth etched surfaces were obtained over a wide range of plasma chemistries.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 244631
• Report Number(s): SAND-96-1143C; CONF-960401-39; ON: DE96010521; TRN: AHC29613%%106
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: [1996]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM PHOSPHIDES
ETCHING
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
INDIUM ARSENIDES
CHLORINE
ARGON
NITROGEN
BORON CHLORIDES
MIXTURES
EXPERIMENTAL DATA
PLASMA PRODUCTION
CHEMICAL COMPOSITION
MORPHOLOGY