ECR etching of GaP, GaAs, InP, and InGaAs in Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}/N{sub 2}
- Sandia National Labs., Albuquerque, NM (United States)
- Univ. of Florida, Gainesville, FL (United States)
- AT and T Bell Labs., Murray Hill, NJ (United States)
Electron cyclotron resonance (ECR) etching GaP, GaAs, InP, and InGaAs are reported as a function of percent chlorine-containing gas for Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}N{sub 2} plasma chemistries. GaAs and GaP etch rates were faster than InP and InGaAs, independent of plasma chemistry due to the low volatility of the InCl{sub x} etch products. GaAs and GaP etch rates increased as %Cl{sub 2} was increased for Cl{sub 2}/Ar and Cl{sub 2}/N{sub 2} plasmas. The GaAs and GaP etch rates were much slower in BCl{sub 3}-based plasmas due to lower concentrations of reactive Cl, however enhanced etch rates were observed in BCl{sub 3}/N{sub 2} at 75% BCl{sub 3}. Smooth etched surfaces were obtained over a wide range of plasma chemistries.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 244631
- Report Number(s):
- SAND--96-1143C; CONF-960401--39; ON: DE96010521
- Country of Publication:
- United States
- Language:
- English
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