High-density plasma etching of compound semiconductors
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Plasma-Therm Inc., St. Petersburg, Florida 33716 (United States)
Inductively coupled plasma (ICP) etching of GaAs, GaP, and InP is reported as a function of plasma chemistry, chamber pressure, rf power, and source power. Etches were characterized in terms of rate and anisotropy using scanning electron microscopy, and root-mean-square surface roughness using atomic force microscopy. ICP etch rates were compared to electron cyclotron resonance etch rates for Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}/N{sub 2} plasmas under similar plasma conditions. High GaAs and GaP etch rates (exceeding 1500nm/min) were obtained in Cl{sub 2}-based plasmas due to the high concentration of reactive Cl neutrals and ions generated as compared to BCl{sub 3}-based plasmas. InP etch rates were much slower and independent of plasma chemistry due to the low volatility of the InCl{sub x} etch products. The surface morphology for all three materials was smooth over a wide range of etch conditions. {copyright} {ital 1997 American Vacuum Society.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 508996
- Report Number(s):
- CONF-961002--
- Journal Information:
- Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 3 Vol. 15; ISSN JVTAD6; ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs
Comparative study of GaN mesa etch characteristics in Cl{sub 2} based inductively coupled plasma with Ar and BCl{sub 3} as additive gases