Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
Electron cyclotron resonance etching of InP, GaP, and GaAs in Ar, Ar/Cl{sub 2}, Ar/Cl{sub 2}/H{sub 2}, and Ar/Cl{sub 2}/H{sub 2}/CH{sub 4} plasmas is reported for substrate temperatures from 10 to 170{degree}C. Etch rates increased as a function of temperature for GaP and GaAs in an Ar/Cl{sub 2} plasma. With the addition of H{sub 2} or H{sub 2}/CH{sub 4} to the plasma, the GaP and GaAs etch rates decreased and were essentially temperature independent. In comparison, InP etch rates showed a strong temperature dependence regardless of plasma chemistry. At 170{degree}C, InP etch rates were greater than GaP and GaAs in the Ar/Cl{sub 2}/H{sub 2} and Ar/Cl{sub 2}/H{sub 2}/CH{sub 4} plasmas. Atomic force microscopy was used to determine the root-mean-square roughness of the etched surfaces. The etched surface morphology for InP was strongly dependent on temperature and plasma chemistry while smooth pattern transfer was obtained for a wide range of plasma conditions for GaAs and GaP. {copyright} {ital 1996 American Vacuum Society}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 284656
- Report Number(s):
- CONF-9510385--
- Journal Information:
- Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 3 Vol. 14; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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