High microwave power electron cyclotron resonance etching of III{endash}V semiconductors in CH{sub 4}/H{sub 2}/Ar
- University of Florida, Gainesville, Florida 32611 (United States)
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Etch rates up to 7000 A/min for InP and 3500 A/min for GaAs are obtained for high microwave power (1000 W) CH{sub 4}/H{sub 2}/Ar electron cyclotron resonance plasma etching. Preferential loss of the group V element leads to nonstoichiometric, unacceptably rough surfaces on In-based binary semiconductors at microwave powers {ge}400 W, regardless of plasma composition. Both Ga- and Al-based materials retain smooth, stoichiometric surfaces even at 1000 W, but the rates are still much slower than for Cl{sub 2} plasma chemistries. The results suggest that CH{sub 4}/H{sub 2} plasmas are not well suited to electron cyclotron resonance systems operating at high powers. {copyright} {ital 1996 American Vacuum Society}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 283403
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 1 Vol. 14; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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