High microwave power ECR etching of III-V semiconductors in CH{sub 4}/H{sub 2}/Ar
Conference
·
OSTI ID:208359
- Florida Univ., Gainesville, FL (United States)
- AT and T Bell Labs., Murray Hill, NJ (United States)
- Sandia National Labs., Albuquerque, NM (United States)
Etch rates up to 7000{angstrom}/min for InP and 3500{angstrom}/min for GaAs are obtained for high microwave power (1000W) CH{sub 4}/H{sub 2}/Ar Electron Cyclotron Resonance plasma etching. Preferential loss of the group V element leads to nonstoichiometric, unacceptably rough surfaces on In-based binary semiconductors at microwave powers {ge}400W, regardless of plasma composition. Both Ga- and Al-based materials retain smooth, stoichiometric surfaces even at I000W, but the rates are still much slower than for C1{sub 2} plasma chemistries. The results suggest that CH{sub 4}/H{sub 2} plasmas are not well suited to ECR systems operating at high powers.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 208359
- Report Number(s):
- SAND--96-0693C; CONF-960502--4; ON: DE96007053
- Country of Publication:
- United States
- Language:
- English
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