ICl/Ar electron cyclotron resonance plasma etching of III{endash}V nitrides

Journal Article · Sun Sep 01 04:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117603· OSTI ID:286892

Vartuli, C B; Pearton, S J; Lee, J W; Hong, J; MacKenzie, J D; Abernathy, C R ^[1]; Shul, R J ^[2]

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1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Electron cyclotron resonance plasma etch rates for GaN, InN, InAlN, AlN, and InGaN were measured for a new plasma chemistry, ICl/Ar. The effects of gas chemistry, microwave and rf power on the etch rates for these materials were examined. InN proved to be the most sensitive to the plasma composition and ion density. The GaN, InN, and InGaN etch rates reached {approximately}13000, 11500, and {approximately}7000 A/min, respectively, at 250 W rf ({minus}275 V dc) and 1000 W microwave power. The etched surface of GaN was found to be smooth, with no significant preferential loss of N from the surface at low rf powers, and no significant residue on the surface after etching. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 286892
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 69; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CHEMICAL REACTIONS
ELECTRON CYCLOTRON-RESONANCE
ETCHING
GALLIUM NITRIDES
INDIUM NITRIDES
PLASMA
SURFACE TREATMENTS
SURFACES