Electron cyclotron resonance etching of III{endash}V nitrides in IBr/Ar plasmas
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
The etch characteristics of GaN, InN, InAlN, AlN, and InGaN were measured for a new plasma chemistry, IBr/Ar, in an electron cyclotron resonance plasma discharge. The effects of plasma composition (12.5{percent}{endash}100{percent} IBr), microwave (400{endash}1000 W) and rf power (50{endash}250 W) on the etch rates for these materials were examined. The etch rates for GaN depended strongly on plasma composition, while the etch rates were only weakly dependent on microwave power in the range 400{endash}800 W for all materials. The etch rates for all materials generally increased with increasing rf power, indicating that higher ion energies are much more efficient in enhancing sputter desorption of the etch products. While the etch rates were slower than with either ICl/Ar or Cl{sub 2}/Ar, the etched surface of GaN was found to be extremely smooth, with little loss of N from the surface at low rf powers, and no significant residue on the surface. {copyright} {ital 1997 American Vacuum Society.}
- OSTI ID:
- 450296
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 1 Vol. 15; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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