ICP dry etching of III-V nitrides

Technical Report · Wed Oct 01 00:00:00 EDT 1997

DOI:https://doi.org/10.2172/541909· OSTI ID:541909

Vartuli, C B; Lee, J W; MacKenzie, J D ^[1]

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1. Univ. of Florida, Gainesville, FL (United States); and others

Inductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH{sub 4}/H{sub 2}/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH{sub 4} based chemistries. The etch rates increased with increasing dc bias. At low rf power (150 W), the etch rates increased with increasing ICP power, while at 350 W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were {le} 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Financial Management and Controller, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States); Office of Naval Research, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 541909
• Report Number(s): SAND--97-2168C; CONF-970302--; ON: DE98000168; BR: YN0100000; CNN: Grant N00014-92-J-1895
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ARGON
CHEMICAL COMPOSITION
ETCHING
EXPERIMENTAL DATA
GALLIUM NITRIDES
HYDROGEN
INDIUM NITRIDES
METHANE
PLASMA
SEMICONDUCTOR MATERIALS