IC1 plasma etching of III{endash}V semiconductors
- University of Florida, Gainesville, Florida 32611 (United States)
Etch rates in excess of 1.5 {mu}m/min for InP and InSb, 1.2 {mu}m/min for GaAs and 0.7 {mu}m/min for GaSb at room temperature were obtained in electron cyclotron resonance IC1/Ar plasmas at low additional rf power (150 W). There was little dependence of etch rate on microwave power over the range 400{endash}1000 W for InP, and selectivities of 6{endash}10 over mask materials such as SiO{sub 2}, SiN{sub x}, and W were typical. Smooth surface morphologies were obtained over a wide range of plasma parameters for GaAs and GaSb, while preferential loss of P led to rough morphologies for InP at high rf powers. IC1-based plasmas appear to be promising universal etchants for Ga- and In-based III{endash}V semiconductors. {copyright} {ital 1997 American Vacuum Society.}
- OSTI ID:
- 530093
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 15; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs
Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part II. InP, InSb, InGaP and InGaAs