Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part II. InP, InSb, InGaP and InGaAs

Journal Article · Thu Dec 17 00:00:00 EST 1998 · Applied Surface Science

OSTI ID:2446

Abernathy, C R; Cho, H; Hahn, Y B; Hays, D C; Jung, K B; Pearton, S J; Shul, R J

The effects of the additive noble gases He, Ar and Xe on chlorine-based Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs were studied as a function of source power, chuck power and discharge composition. The etch rates of all materials with C12/He and C12/Xe are greater than with C12/Ar. Etch rates in excess of 4.8 pndmin for InP and InSb with C12/He or C12/Xe, 0.9 pndmin for InGaP with C12/Xe, and 3.8 prdmin for InGaAs with Clz/Xe were obtained at 750 W ICP power, 250 W rf power, - 1570 C12 and 5 mTorr. All three plasma chemistries produced smooth morphologies for the etched InGaP surfaces, while the etched surface of InP showed rough morphology under all conditions.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 2446
• Report Number(s): SAND98-2820J; ON: DE00002446
• Journal Information: Applied Surface Science, Journal Name: Applied Surface Science
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Rare Gases
Trace Amounts
Etching
Plasma
Chlorine
Semiconductor Materials
Indium Phosphides
Indium Antimonides
Indium Arsenides
Gallium Phosphides
Gallium Antimonides