Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs

Abernathy, C R; Cho, H; Hahn, Y B; Hays, D C; Hobson, W S; Jung, K B; Lambers, E S; Pearton, S J; Shul, R J

Title: Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs

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Abstract

A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

Authors:: Abernathy, C R; Cho, H; Hahn, Y B; Hays, D C; Hobson, W S; Jung, K B; Lambers, E S; Pearton, S J; Shul, R J

Publication Date:: Mon Nov 23 00:00:00 EST 1998

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1998

Report Number(s):: SAND98-2615J
ON: DE00001998

DOE Contract Number:: AC04-94AL85000

Resource Type:: Journal Article

Journal Name:: Plasma Chemistries and Plasma Processes

Additional Journal Information:: Journal Name: Plasma Chemistries and Plasma Processes

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Etching; Indium Phosphides; Indium Antimonides; Indium Base Alloys; Plasma

Citation Formats


                    Abernathy, C R, Cho, H, Hahn, Y B, Hays, D C, Hobson, W S, Jung, K B, Lambers, E S, Pearton, S J, and Shul, R J. Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs.  United States: N. p., 1998. 
        Web.

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                    Abernathy, C R, Cho, H, Hahn, Y B, Hays, D C, Hobson, W S, Jung, K B, Lambers, E S, Pearton, S J, & Shul, R J. Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs.  United States.

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                    Abernathy, C R, Cho, H, Hahn, Y B, Hays, D C, Hobson, W S, Jung, K B, Lambers, E S, Pearton, S J, and Shul, R J. 1998.  
        "Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs".  United States.  https://www.osti.gov/servlets/purl/1998.

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@article{osti_1998,

  title        = {Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs},

  author       = {Abernathy, C R and Cho, H and Hahn, Y B and Hays, D C and Hobson, W S and Jung, K B and Lambers, E S and Pearton, S J and Shul, R J},

  abstractNote = {A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/1998},
  journal      = {Plasma Chemistries and Plasma Processes},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Mon Nov 23 00:00:00 EST 1998},

  month        = {Mon Nov 23 00:00:00 EST 1998}

}

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