Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs

Journal Article · Mon Nov 23 00:00:00 EST 1998 · Plasma Chemistries and Plasma Processes

OSTI ID:1998

Abernathy, C R; Cho, H; Hahn, Y B; Hays, D C; Hobson, W S; Jung, K B; Lambers, E S; Pearton, S J; Shul, R J

A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1998
• Report Number(s): SAND98-2615J; ON: DE00001998
• Journal Information: Plasma Chemistries and Plasma Processes, Journal Name: Plasma Chemistries and Plasma Processes
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Etching
Indium Phosphides
Indium Antimonides
Indium Base Alloys
Plasma