High temperature electron cyclotron resonance etching of GaN, InN, and AlN

Journal Article · Mon Apr 03 04:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.113359· OSTI ID:26029

Shul, R J; Kilcoyne, S P; Hagerott Crawford, M; Parmeter, J E ^[1]; Vartuli, C B; Abernathy, C R; Pearton, S J ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl{sub 2}/H{sub 2}/CH{sub 4}/Ar and Cl{sub 2}/H{sub 2}/Ar plasmas. Using Cl{sub 2}/H{sub 2}/CH{sub 4}/Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 {degree}C and then increase to a maximum of 2340 A/min at 170 {degree}C. The InN etch rate decreases monotonically from 30 to 150 {degree}C and then rapidly increases to a maximum of 2300 A/min at 170 {degree}C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 {degree}C. When CH{sub 4} is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl{sub 2}/H{sub 2}/CH{sub 4}/Ar plasma over the temperatures studied.

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 26029
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 66; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
DAMAGE
ECR HEATING
ETCHING
GALLIUM NITRIDES
INDIUM NITRIDES
PLASMA
SURFACE TREATMENTS