Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- U.S. Army Research Laboratory, Research Triangle Park, North Carolina 27709 (United States)
- Hughes Research Laboratories, Malibu, California 90265 (United States)
Several new wet and dry etch processes required for fabrication of microdisk lasers in the III nitrides have been developed. ICl/Ar electron cyclotron resonance plasmas produce etch rates of 1.3 {mu}m/min for GaN and 1.15 {mu}m/min for InN at 1000 W microwave power and 250 W of rf power. These rates are substantially faster than previously investigated Cl{sub 2}/Ar or CH{sub 4}/H{sub 2} plasma chemistries. Selectivities of 5{endash}6 over AlN are obtained for these materials. Wet chemical etching of AlN and In{sub {ital X}}Al{sub 1{minus}{ital X}}N in KOH-based solutions was found to be a strong function of etch temperature and material quality. The activation energy for these materials was in the range 2{endash}6 kcal/mol, typical of diffusion-controlled processes. The KOH solutions did not etch GaN or InN at temperature as high as 80{degree}C. {copyright} {ital 1996 American Vacuum Society}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 399787
- Report Number(s):
- CONF-960582--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 14; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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