Sidewall damage in n/sup +/-GaAs quantum wires from reactive ion etching
Journal Article
·
· Appl. Phys. Lett.; (United States)
Electron cyclotron resonance and radio frequency reactive ion etching have been used to fabricate narrow n/sup +/-GaAs wires employing CCl/sub 2/F/sub 2//He as the etch gas. A comparison of the induced sidewall damage is made using room-temperature conductivity measurements of the etched structures and the effect of overetching is investigated. In addition, preliminary analysis of low-temperature transport reveals that the amplitude of universal conductance fluctuations is extremely sensitive to sidewall damage.
- Research Organization:
- IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
- OSTI ID:
- 6181829
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:21; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED-PARTICLE TRANSPORT
CYCLOTRON RESONANCE
DAMAGE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON CYCLOTRON-RESONANCE
ELEMENTS
EPITAXY
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LOW TEMPERATURE
MOLECULAR BEAM EPITAXY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION TRANSPORT
RESONANCE
SEMIMETALS
SILICON
SURFACE FINISHING
WIRES
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED-PARTICLE TRANSPORT
CYCLOTRON RESONANCE
DAMAGE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON CYCLOTRON-RESONANCE
ELEMENTS
EPITAXY
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LOW TEMPERATURE
MOLECULAR BEAM EPITAXY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION TRANSPORT
RESONANCE
SEMIMETALS
SILICON
SURFACE FINISHING
WIRES