Electrical damage induced by ion beam etching of GaAs

Journal Article · Fri Jan 01 04:00:00 EST 1988 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584023· OSTI ID:5617563

Scherer, A; Craighead, H G; Roukes, M L; Harbison, J P

We have examined the electrical damage induced in GaAs by ion milling and ion beam assisted etching, relevant to the fabrication of small conducting structures. The depth of the damage was measured by Schottky barrier measurements with in situ deposited gold contacts and by resistance and mobility measurements of etched two-dimensional electron gas structures. The effect of exposed etched sidewalls on the conductivity of narrow wires was examined for GaAs/AlGaAs structures. We find that it is possible to create wires narrower than surface depletion lengths by defining the structures through ion beam induced damage without exposing the sidewalls. In particular, narrow conducting wires can be defined solely by etching the thin-undoped-GaAs cap layer atop the modulation doped material.

• Research Organization: Bell Communications Research, Red Bank, New Jersey 07701
• OSTI ID: 5617563
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 6:1; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
COLLISIONS
DAMAGE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELEMENTS
ETCHING
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
ION BEAMS
ION COLLISIONS
METALS
MOBILITY
PARTICLE MOBILITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE FINISHING
THIN FILMS
TRANSITION ELEMENTS