Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage
Journal Article
·
· Appl. Phys. Lett.; (United States)
We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl/sub 2/ gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov--Bohm oscillations are seen in rings defined by this controlled etch-damage patterning. This patterning technique holds promise for creating one-dimensional conducting wires of even smaller sizes.
- Research Organization:
- Bell Communications Research, Red Bank, New Jersey 07701
- OSTI ID:
- 5572791
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:25; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARGON IONS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHANNELING
CHARGED PARTICLES
CHLORINE
COLLISIONS
COUPLING
ELECTRON BEAMS
ELECTRON GAS
ELEMENTS
ETCHING
FILMS
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GASES
HALL EFFECT
HALOGENS
ION CHANNELING
ION COLLISIONS
IONS
LEPTON BEAMS
NONMETALS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SURFACE FINISHING
THIN FILMS
WIRES
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARGON IONS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHANNELING
CHARGED PARTICLES
CHLORINE
COLLISIONS
COUPLING
ELECTRON BEAMS
ELECTRON GAS
ELEMENTS
ETCHING
FILMS
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GASES
HALL EFFECT
HALOGENS
ION CHANNELING
ION COLLISIONS
IONS
LEPTON BEAMS
NONMETALS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SURFACE FINISHING
THIN FILMS
WIRES