Narrow conducting channels defined by helium ion beam damage

Journal Article · Mon Nov 14 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100337· OSTI ID:6724530

Cheeks, T L; Roukes, M L; Scherer, A; Craighead, H G

We have developed a new technique for patterning narrow conducting channels in GaAs-AlGaAs two-dimensional electron gas (2DEG) materials. A low-energy He ion beam successfully patterned narrow wires with little or no etching of the thin GaAs cap. The damage propagation of the He ion even at low energies was sufficient to decrease the mobility of the 2DEG located deep within the structure. The damage can be removed by a low-temperature anneal but remains stable at room temperature. Conducting channels as narrow as 300 nm have been fabricated and measured using low-temperature magnetoresistance.

• Research Organization: Bell Communications Research, Red Bank, New Jersey 07701
• OSTI ID: 6724530
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:20; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
CHARGED PARTICLES
DAMAGE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ETCHING
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HELIUM IONS
ION CHANNELING
IONS
MAGNETORESISTANCE
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SURFACE FINISHING
THIN FILMS