Plasma generating apparatus for large area plasma processing

Patent · Tue Jul 16 00:00:00 EDT 1991

OSTI ID:7083823

Tsai, C C; Gorbatkin, S M; Berry, L A

A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm[sup 2]. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity. 3 figures.

• DOE Contract Number: AC05-84OR21400
• Assignee: Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States)
• Patent Number(s): US 5032202; A
• Application Number: PPN: US 7-416804
• OSTI ID: 7083823
• Resource Relation: Patent File Date: 3 Oct 1989
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INTEGRATED CIRCUITS
ETCHING
PLASMA PRODUCTION
MICROWAVE RADIATION
BEAM PRODUCTION
ELECTRON CYCLOTRON-RESONANCE
ION BEAMS
MAGNETIC CONFINEMENT
MICROWAVE EQUIPMENT
PHOTORESISTORS
BEAMS
CONFINEMENT
CYCLOTRON RESONANCE
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
MICROELECTRONIC CIRCUITS
PLASMA CONFINEMENT
RADIATIONS
RESISTORS
RESONANCE
SURFACE FINISHING
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)