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Structure of a Nb oxide tunnel barrier in a Josephson junction

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.330118· OSTI ID:7081185
Oxides grown on the surface of a polycrystalline Nb thin film using rf plasma cleaning and plasma oxidation processes were examined by transmission electron microscopy. The oxides were prepared on the Nb surface using the same rf plasma processes developed for fabricating the tunnel barriers of Nb/Nb oxide/Pb alloy Josephson tunnel junctions. Transmission electron diffraction patterns obtained from the tunnel barrier formed on the Nb surface indicated the presence of a crystalline NbC/sub 0.25/O/sub 0.75/ layer between the amorphous Nb/sub 2/O/sub 5/ tunnel barrier layer and the Nb base electrode. The thickness of this transition layer was found to be sensitive to the rf plasma cleaning conditions prior to the tunnel barrier formation. The formation of this NbC/sub 0.25/O/sub 0.75/ layer of proper thickness is correlated to good junction quality. An epitaxial relationship between the NbC/sub 0.25/O/sub 0.75/ layer and the underlying Nb crystal was also observed.
Research Organization:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
OSTI ID:
7081185
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:11; ISSN JAPIA
Country of Publication:
United States
Language:
English