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Characterization of Nb/Nb oxide structures in Josephson tunnel junctions

Journal Article · · IEEE Trans. Magn.; (United States)
The subgap conductance of Nb/Nb oxide/Pb-alloy Josephson tunnel junctions was found to strongly depend on the rf plasma processing used to form the Nb oxide tunnel barrier. The authors have therefore studied the Nb/Nb oxide structures after rf plasma processing using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) data. A crystalline Nb-C-O layer was formed as a transition region between the polycrystalline Nb base electrode and the Nb/sub 2/O/sub 5/ tunnel barrier. The thickness of this transition region is sensitive to the rf plasma cleaning conditions prior to the tunnel barrier formation. An unexpected relation between junction electrical properties and the Nb/Nb oxide structure exists. The lowest subgap conductances are those obtained for tunnel junctions with transition regions about 30A thick. An abrupt interface between Nb and Nb/sub 2/O/sub 5/ leads to junctions with high subgap conductances.
Research Organization:
IBM, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
OSTI ID:
5483111
Journal Information:
IEEE Trans. Magn.; (United States), Journal Name: IEEE Trans. Magn.; (United States) Vol. 19:3; ISSN IEMGA
Country of Publication:
United States
Language:
English