Method of fabrication of Josephson tunnel junction
Patent
·
OSTI ID:5180835
There is disclosed a method of fabrication of a Josephson tunnel junction device. A surface of a base electrode of Nb or Nb compound is subjected to sputter cleaning and then to plasma oxidation in an atmosphere of a diluent gas and oxygen to form thereon an oxide layer serving as a tunnel barrier. A counter electrode is then formed on the oxide layer to provide the Josephson tunnel junction.
- Assignee:
- Nippon Telegraph and Telephone Public Corp. (Japan)
- Patent Number(s):
- US 4412902
- OSTI ID:
- 5180835
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHEMICAL REACTIONS
ELEMENTS
FABRICATION
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
NIOBIUM
NIOBIUM COMPOUNDS
OXIDATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPUTTERING
SUPERCONDUCTING JUNCTIONS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNNEL DIODES
TUNNEL EFFECT
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHEMICAL REACTIONS
ELEMENTS
FABRICATION
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
NIOBIUM
NIOBIUM COMPOUNDS
OXIDATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPUTTERING
SUPERCONDUCTING JUNCTIONS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNNEL DIODES
TUNNEL EFFECT