Fabrication of Josephson tunnel junctions by reactive ion milling. Technical report

Technical Report · Mon Jul 21 04:00:00 EDT 1980

OSTI ID:6697493

Kleinsasser, A W; Buhrman, R A

A new technique has been developed for growing high quality, ultrathin oxide layers on metal films, suitable for use as tunneling barriers in Josephson junction devices. The oxides are produced with an argon-oxygen ion beam, and the rate of growth is determined by the competition between oxidation and sputtering by the ions. The oxidation technique has been applied to the fabrication of high current density submicron niobium-lead alloy Josephson junctions. High quality junctions have been produced with critical current densities exceeding 100,000 amp/sq cm and having low leakage currents at voltages below the energy gap. An edge geometry has been developed, allowing in-line junctions to be formed on the ion mill-patterned edge of Nb film. In this way, junction width is controlled by the Nb film thickness.

• Research Organization: Cornell Univ., Ithaca, NY (USA). School of Applied and Engineering Physics
• OSTI ID: 6697493
• Report Number(s): AD-A-087448
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHALCOGENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FABRICATION
ION IMPLANTATION
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
NIOBIUM
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
REFRACTORY METALS
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
TRANSITION ELEMENTS