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New fabrication process for Josephson tunnel junctions with (niobium nitride, niobium) double-layered electrodes

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.93378· OSTI ID:6719077
All hard Josephson tunnel junctions, whose base and counter electrodes are composed of double-layered niobium nitride (NbN) and niobium (Nb) films, have been successfully fabricated by isolating a junction sandwich formed on a whole silicon wafer with a reactive ion etching technique. The reactive ion etching technique has been used for patterning both base and counterelectrodes, and self-aligning definition of junction areas has been performed. The fabricated junctions show good quality single-particle tunneling characteristics and excellent uniformity in critical currents.
Research Organization:
Electrotechnical Laboratory, 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaraki 305, Japan
OSTI ID:
6719077
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:11; ISSN APPLA
Country of Publication:
United States
Language:
English