NbN tunnel junctions
All-niobium nitride Josephson junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (Nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled Dry Reactive Ion Etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-Magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250/sup 0/C.
- Research Organization:
- Commissariat a l'Energie Atomique LETI-IRDI, Grenoble
- OSTI ID:
- 6485927
- Report Number(s):
- CONF-840937-
- Journal Information:
- IEEE Trans. Magn.; (United States), Journal Name: IEEE Trans. Magn.; (United States) Vol. MAG 21:2; ISSN IEMGA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101 -- Metals & Alloys-- Preparation & Fabrication
420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTAL GROWTH METHODS
DEPOSITION
ELECTRODES
ETCHING
FABRICATION
FILMS
JOSEPHSON JUNCTIONS
JUNCTIONS
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
OPTICAL SYSTEMS
PNICTIDES
REFRACTORY METAL COMPOUNDS
SPUTTERING
SUPERCONDUCTING DEVICES
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
SURFACE FINISHING
TRANSITION ELEMENT COMPOUNDS
TUNNEL EFFECT