Properties of NbN/Pb Josephson tunnel junctions
Tunnel junctions made with NbN base electrodes and Pb counterelectrodes are investigated and characterized in terms of their potential for high-performance digital Josephson circuits. The NbN is deposited by dc magnetron reactive sputtering onto substrates which are held near room temperature (T /SUB s/ < 90/sup 0/C) to assure compatibility with conventional photoresist liftoff; the process results in films with a T /SUB c/ of 14.2K and an energy gap parameter ..delta.. /SUB NbN/ = 2.4meV. Tunnel junctions are formed by ion cleaning and reactive ion beam oxidation, and typically have low leakage and no excess conduction above the sum of the gaps. The effective penetration depth of NbN/Nb bilayers is shown to be small, while the specific capacitance of the junctions is comparable to that of Nb base-electrode junctions.
- Research Organization:
- Bell Laboratories, Murray Hill, NJ 07974
- OSTI ID:
- 5535771
- Journal Information:
- IEEE Trans. Magn.; (United States), Journal Name: IEEE Trans. Magn.; (United States) Vol. 19:3; ISSN IEMGA
- Country of Publication:
- United States
- Language:
- English
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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
ELECTRICAL PROPERTIES
ELECTRODES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
ENERGY GAP
EQUIPMENT
JOSEPHSON JUNCTIONS
JUNCTIONS
LEAD
MAGNETRONS
METALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
PENETRATION DEPTH
PERFORMANCE TESTING
PHYSICAL PROPERTIES
PNICTIDES
SPUTTERING
SUPERCONDUCTING JUNCTIONS
TESTING
TRANSITION ELEMENT COMPOUNDS
TUNNEL EFFECT